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基于硅技術(shù)24GHz汽車?yán)走_(dá)的微波電路

2013-02-17 來(lái)源:微波射頻網(wǎng) 我要評(píng)論(0) 字號(hào):
定價(jià): ¥ 50
作者: Vadim Issakov
出版: 科學(xué)出版社
書號(hào): 9787030344779
語(yǔ)言: 英文原版
日期: 2012-06-01
版次: 1 頁(yè)數(shù): 208
開本: 16開 查看: 0
基于硅技術(shù)24GHz汽車?yán)走_(dá)的微波電路

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圖書介紹

科學(xué)出版社引進(jìn)一批國(guó)外知名出版社的優(yōu)秀著作,使我國(guó)從事信息技術(shù)的廣大科學(xué)工作者和工程技術(shù)人員能以較低的價(jià)格購(gòu)買,對(duì)于推動(dòng)我國(guó)信息技術(shù)領(lǐng)域的科研與教學(xué)是十分有益的事。VadimIssakov所著的《基于硅技術(shù)24GHz汽車?yán)走_(dá)的微波電路(影印版)》是叢書之一。
 
基于硅技術(shù)24GHz汽車?yán)走_(dá)的微波電路介紹了設(shè)計(jì)、實(shí)現(xiàn)微波電路以及CMOS和SiGe雙極技術(shù)的微波接收器電路特性。基于硅技術(shù)24GHz汽車?yán)走_(dá)的微波電路所介紹的電路設(shè)計(jì)適用于汽車工業(yè)應(yīng)用技術(shù), 如車道變換輔助系統(tǒng)以及報(bào)警器等。基于硅技術(shù)24GHz汽車?yán)走_(dá)的微波電路適合相關(guān)專業(yè)研究生以及高年級(jí)本科生使用。

圖書目錄

1 Introduction
References
2 Radar Systems
2.1 Radar Principle
2.2 Radar Equation and System Considerations
2.3 CW and Frequency-Modulated Radar
2.3.1 Doppler Radar
2.3.2 Frequency-Modulated Radar
2.3.2.1 Linear FM Continuous-Wave Radar
2.4 Angle Detection
2.5 Frequency Regulations
2.6 Receiver Architectures
2.6.1 Homodyne
2.6.2 Heterodyne
2.7 Status of Automotive Radar Systems
2.8 Technology Requirements for Radar Chipset
References
3 CMOS and Bipolar Technologies
3.1 CMOS Technology
3.1.1 MOSFET Layout and Modeling Considerations
3.1.2 Devices Available in C11N
3.2 Bipolar Transistors
3.2.1 HBT Layout and Modeling Considerations
3.2.2 Devices Available in B7HF200
3.3 Technology Comparison
3.3.1 Transistor Performance
3.3.2 Metallization and Passive Components
References
4 Modeling Techniques
4.1 Analytical Fitting of On-Chip Inductors
4.1.1 Series Branch Parameters Fitting
4.1.2 Shunt Branches Parameters Fitting
4.1.3 Results Verification
4.2 Transistor Finger Capacitance Estimation
References
5 Measurement Techniques
5.1 S-parameter De-embedding Techniques
5.1.1 Extension of Thru Technique for De-embedding of Asymmetrical Error Networks
5.1.1.1 Theory
5.1.1.2 Result Verification
5.1.2 De-embedding of Differential Devices using cascade-based Two-Port Techniques
5.1.2.1 Theory
5.1.2.2 Result Verification
5.2 Differential Measurements using Baluns
5.2.1 Theoretical Analysis
5.2.1.1 Back-to-BackMeasurement
5.2.1.2 DUT Measurement
5.2.1.3 Insertion Loss De-embedding Error
5.2.2 Measurement Verification
References
6 Radar Receiver Circuits
6.1 Low-Noise Amplifiers
6.1.1 LNA in CMOS Technology
6.1.2 LNA in SiGe:C Technology
6.1.3 Measurements of CMOS and SiGe LNAs
6.1.4 LNA Results Summary and Comparison
6.2 Mixers
6.2.1 Active Mixers
6.2.1.1 Active Mixer in CMOS Technology
6.2.1.2 Active Mixer in SiGe Technology
6.2.1.3 Measurements of CMOS and SiGe Active Mixers
6.2.1.4 Active Mixers Results Summary and Comparison
6.2.2 Passive Mixers
6.2.2.1 Passive Resistive Ring Mixer in CMOS Technology
6.2.2.2 Passive Bipolar Mixer in SiGe Technology
6.2.2.3 Measurements of CMOS and SiGe Passive Mixers
6.2.2.4 Passive Mixers Results Summary and Comparison
6.2.3 Comparison of Active and Passive Mixers
6.3 Single-Channel Receivers
6.3.1 Design of Active and Passive Receivers in CMOS
6.3.2 Receiver Measurements and Analysis
6.3.2.1 Chip Size
6.3.2.2 Power Consumption, Gain and Noise Figure
6.3.2.3 Linearity
6.3.2.4 Required LO Power
6.3.2.5 Isolation
6.3.2.6 Temperature Performance
6.3.3 Receiver Results Summary and Comparison
6.4 IQ Receivers
6.4.1 Design of IQ Receivers
6.4.1.1 IQ Receiver in CMOS Technology
6.4.1.2 IQ Receiver in SiGe Technology
6.4.2 IQ Receiver Measurements
6.4.3 IQ Receiver Results Summary and Comparison
6.5 Integrated Passive Circuits
6.5.1 Circuit Design and Layout Considerations
6.5.1.1 On-Chip 180癙ower Splitter/Combiner
6.5.1.2 On-Chip 90癙ower Splitter/Combiner
6.5.1.3 On-Chip 180癏ybrid Ring Coupler
6.5.2 Realization and Measurement Results
6.5.2.1 On-Chip 180癙ower Splitter/Combiner
6.5.2.2 On-Chip 90癙ower Splitter/Combiner
6.5.2.3 On-Chip 180癏ybrid Ring Coupler
6.5.3 Results Summary and Discussion
6.6 Circuit-Level RF ESD Protection
6.6.1 Overview of Circuit-Level Protection Techniq:ues
6.6.2 Virtual Ground Concept
6.6.2.1 Concept Verification by Circuit Simulation
6.6.2.2 Concept Verification by HBM Measurement
6.6.2.3 Concept Verification by TLP Measurement
6.6.3 Transformer Protection Concept
6.6.3.1 Test LNA Circuit Design
6.6.3.2 Test LNA Realization and Measurement
6.6.3.3 Concept Verification by TLP Measurement
References
7 Radar Transceiver Circuits
7.1 IQ Transceiver in CMOS
7.1.1 IQ Transceiver Circuit Design
7.1.2 Measurements of Transceiver
7.1.3 Results Summary and Comparison
7.2 Merged Power-Amplifier-Mixer Transceiver
7.2.1 System Considerations
7.2.2 Power-Amplifier-Mixer Circuit Design
7.2.3 PAMIX Measurements
7.2.4 Results Summary and Comparison
References
8 Conclusions and Outlook
A LFMCW Radar
References
B FSCW Radar
References
C Surface Charge Method
C.1 Surface Charge Method Theory
C.2 Meshing of the Multifinger Layout
D Measurement of Active Circuits
D.1 Measurement Techniques
D.2 LNA Characterization
D.2.1 S-parameter Measurement
D.2.2 Noise Figure Measurement
D.2.3 Linearity Measurement
D.3 Mixer and Receiver Characterization
D.3.1 Conversion Gain Measurement
D.3.2 Noise Figure Measurement
D.3.3 Linearity Measurement
References
Index

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